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Oxidation stages of aluminium nitride thin films obtained by plasma-enhanced chemical vapour deposition (PECVD)

Abstract : Oriented (100) aluminium nitride thin films grown on silicon wafers (100) and other substrates, were deposited at 330°C by the metal-organic PECVD process. The oxidation behaviour in air of these films was studied at temperatures from 500°C to 1300°C by X-ray diffraction, scanning electron microscopy and Auger electron spectroscopy. Two textural changes occur: granular and porous textures at 900°C and 1100°C, respectively. These correspond to the amorphous Al2O3 and the crystalline α-alumina formation. Infra-red absorption spectroscopy shows that the oxidation effectively starts at 600°C and reveals an oxynitride phase between the amorphous Al2O3 coating which is formed, and the AlN remaining.
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N. Azema, J. Durand, R. Berjoan, C. Dupuy, L. Cot. Oxidation stages of aluminium nitride thin films obtained by plasma-enhanced chemical vapour deposition (PECVD). Journal of the European Ceramic Society, Elsevier, 1991, 8 (5), pp.291-298. ⟨10.1016/0955-2219(91)90123-H⟩. ⟨hal-03180772⟩

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